Research Director at CNRS CNRS/LPN, route de Nozay, 91460 Marcoussis,France

报告摘要： In order to fill the gap of low-temperature and low-frequency noise field-effect transistors and to meet the needs in various experiments under deep cryogenic conditions, specially designed HEMTs with different gate capacitances have been fabricated and characterized at 4.2 and 77 K. At 4.2 K and with an appropriate gate capacitance, the obtained lowest input noise voltage at 1 Hz is 6 nV/Hz1/2; the lowest input noise current at 1 Hz is about 3 aA/Hz1/2; their white noise voltage is about 0.2 nV/Hz1/2; and for switch applications, the channel resistance can be varied from about 10 Ω to more than 10 GΩ with a gate leakage current lower than 1 pA.

REFERENCES
Device researches:
- Ultra-low noise high electron mobility transistors for high-impedance and low-frequency deep cryogenic readout electronics, Q. Dong, Y. X. Liang, D. Ferry, A. Cavanna, U. Gennser, L. Couraud and Y. Jin. Appl. Phys. Lett. 105, 013504 (2014).
- Insight into low frequency noise induced by gate leakage current in AlGaAs/GaAs high electron mobility transistors at 4.2 K, Y. Liang, Q. Dong, M.-C. Cheng, U. Gennser, A. Cavanna and Y. Jin. Appl. Phys. Lett. 99, 113505 (2011).
- Evidence of a fully ballistic one-dimensional field-effect transistor: Experiment and simulation, E. Gremion, D. Niepce, A. Cavanna, U. Gennser and Y. Jin. Appl. Phys. Lett. 97, 233505 (2010).
Applications:
- Ionization Readout of CDMS Detectors with Low Power, Low Noise HEMTs, A. Phipps, Y. Jin, B. Sadoulet, J. Low Temp. Phys. 176, 470 (2014)
http://cdms.berkeley.edu/cdms_collab.html
- Quantum limit of heat flow across a single electronic channel, S. Jezouin, F. Parmentier, A. Anthore, U. Gennser, A. Cavanna, Y. Jin, F. Pierre. Science 342, 601 (2013)

联 系 人：朱晓波  （Tel：82649789）