阿里巴巴达摩院量子实验室

腾讯会议：831-165-219

报告摘要：

Disordered superconducting nitrides with kinetic inductance have long been considered to be leading material candidates for high-inductance quantum-circuit applications (i.e., fluxonium qubits, photon detectors, etc.). Despite continuing efforts toward reducing material dimensions or altering material chemistries to increase the kinetic inductance and the corresponding circuit impedance, achieving further improvements without compromising material quality has become a fundamental challenge. In this talk, I will discuss a method developed at Alibaba Quantum Laboratory to drastically increase the kinetic inductance of superconducting materials while maintaining a reasonably low microwave loss. We use epitaxial Ti_0.48Al_0.52N films as a model system and utilize spinodal decomposition to trigger the insulator-to-superconductor transition in such materials with a drastically enhanced chemical and structural disorder. The measured kinetic inductance increases by two to three orders of magnitude compared with the best disordered superconducting nitrides reported to date. We believe this work has demonstrated the feasibility of substantially enhancing and deterministically controlling the kinetic inductance of nitride-based superconductors for advanced superconducting quantum circuits. In the end, I will also discuss the implementation of such materials in the construction of fluxonium qubits.

报告人简介：
高然博士现任阿里巴巴达摩院量子实验室量子科学家，主要负责低损耗超导量子芯片的研发及制备、量子比特退相干机理研究、以及适用于高精度量子芯片的新材料体系的开发。高然博士本科毕业于复旦大学材料物理专业，2014年获得美国伊利诺伊大学香槟分校材料科学硕士学位，2019年博士毕业于美国加利福尼亚大学伯克利分校。高然博士有多年的外延薄膜材料生长、材料结构及物性表征、以及微纳芯片制备工艺的经验。

邀请人：刘 淼 副研究员（9407）

联系人：张 萃 副研究员（8609）