Linkoping University（林雪平大学）
报告摘要：
Power electronics is the enabling technology for efficient use, distribution, and conversion of electrical energy. Silicon, which is the base material in electronics nowadays, cannot provide a variety of functions needed in the future electronic devices. The transition from Si to wide band gap semiconductors (WBGSs) will save tremendous amounts of electricity otherwise lost in operation. The larger breakdown voltage inherent in WBGSs leads directly to reduced dimensions and hence to reduced resistive losses. Recently, the ultra-wide bandgap β-Ga2O3 has emerged as a novel material with tremendous potential, exhibiting a figure of merits overperformed only by diamond. β-Ga2O3 is the thermodynamically stable form among the various polymorphs of gallium oxide and has impressive properties, e.g., a bandgap of ~4.85 eV, a breakdown field of 8 MV/cm, a large Baliga figure of merit, and a rather good radiation stability. Epitaxial growth, properties, and potential applications of the β-polytype of gallium oxide in future high-power electronic devices related to electric vehicles, electric trains, distribution systems, as well as high and low voltage switching networks will be discussed.
报告人简介：
Dr. Daniela Gogova obtained her MSc degree from Sofia University and PhD degree from the Bulgarian Academy of Sciences. Since 1991, She has been working in the research field of Materials Science and Engineering at the Bulgarian Academy of Sciences, Technology University of Berlin, Linköping University in Sweden, Leibniz Institute for Crystal Growth in Berlin, University of Oslo, and since 2021 working at Linköping University as a Principal Research Engineer. The focus of her work has been on the synthesis of novel semiconductors (mainly oxides and nitrides) with thicknesses ranging from microns to a few nanometers by different deposition methods such as CVD (MOCVD, PECVD, HVPE) and PVD (all modifications of sputtering, evaporation, PLD). The materials she studied include wide bandgap semiconductor GaN, AlGaN, Ga2O3, etc.
会议室：M楼238会议室
邀请人：鲁年鹏 研究员（9122）
联系人：王立芬 副研究员（9963）