University of Geneva

报告人简介：

Alberto Morpurgo is a condensed matter physicist. He received his PhD in 1998 from the University of Groningen for his thesis on mescocopic physics, for which he also received the Miedema Prize 1998 for the best Dutch PhD thesis. After a postdoctoral stay at Stanford University, he moved to Delft University as associate professor. In 2008, he moved to University of Geneva as full professor. His research has covered a broad variety of material systems and physics problems. Since the original discovery of graphene, he has been working with increasing intensity in the field of 2D materials and heterostructures.

报告摘要：

Ionic gating has been employed very successfully on 2D materials to induce new phenomena, control their electronic properties, and realize proof-of-principle devices. Such a configuration buries the 2D material in between the ionic liquid and the substrate, thereby preventing direct access with many different physical probes. A solution to this problem requires introducing techniques that enable ionic liquid gating to be performed in a back-gate configuration. Over the last few years we have been working to create ionic gated devices that can be operated controllably in a back-gate configuration and we have now succeeded by using so-called Li-ion glass ceramic substrates. In this talk I will discuss the realization and characterization of back gated transistors with 2D semiconducting transition metal dichalcogenides, demonstrate ambipolar operation, and the observation of gate induced superconductivity. I will then present a first type of experiments that are enabled by these new ionic gates, namely the realization of double-gated ionic transistors allowing the application of perpendicular electric fields larger than 3 V/nm, sufficient to quench the1.6 eV band gap of bilayer WSe2. If I have time, I will also briefly discuss experiments in double ionic gate bilayer graphene devices allowing the application of interlayer potential larger than tperp, a regime never explored earlier.

邀请人：陈其宏 (qihongchen@iphy.ac.cn)

联系人：胡  颖（8264 9361）

报告地点：中国科学院物理研究所M楼253会议室